PlumX Metrics
Embed PlumX Metrics

Core-level binding-energy shifts, thermodynamic predictions, and morphologies for metal-Si and metal-Ge interfaces

Physical Review B, ISSN: 0163-1829, Vol: 36, Issue: 9, Page: 4761-4768
1987
  • 43
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    43
    • Citation Indexes
      43
  • Captures
    4

Article Description

High-resolution core-level photoemission results show two or more distinct reacted chemical species for a wide variety of metal-Si and metal-Ge interfaces. Assuming that the first reacted species at the interface have 50 at. % Si (or Ge) and the second species are solid solutions of Si (or Ge) in metal matrices, we find reasonable agreement between calculated and experimental chemical shifts. These analyses allow correlation between the reaction products observed at metal-semiconductor interfaces and the bulk thermodynamic properties of the constituents. These results are in agreement with those obtained from a morphological model for evolving interfaces developed by Butera, del Giudice, and Weaver. © 1987 The American Physical Society.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know