Core-level binding-energy shifts, thermodynamic predictions, and morphologies for metal-Si and metal-Ge interfaces
Physical Review B, ISSN: 0163-1829, Vol: 36, Issue: 9, Page: 4761-4768
1987
- 43Citations
- 4Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
High-resolution core-level photoemission results show two or more distinct reacted chemical species for a wide variety of metal-Si and metal-Ge interfaces. Assuming that the first reacted species at the interface have 50 at. % Si (or Ge) and the second species are solid solutions of Si (or Ge) in metal matrices, we find reasonable agreement between calculated and experimental chemical shifts. These analyses allow correlation between the reaction products observed at metal-semiconductor interfaces and the bulk thermodynamic properties of the constituents. These results are in agreement with those obtained from a morphological model for evolving interfaces developed by Butera, del Giudice, and Weaver. © 1987 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0000957190&origin=inward; http://dx.doi.org/10.1103/physrevb.36.4761; http://www.ncbi.nlm.nih.gov/pubmed/9943490; https://link.aps.org/doi/10.1103/PhysRevB.36.4761; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.4761/fulltext; http://link.aps.org/article/10.1103/PhysRevB.36.4761
American Physical Society (APS)
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