C-axis conduction in graphite intercalation compounds
Physical Review B, ISSN: 0163-1829, Vol: 37, Issue: 9, Page: 4752-4759
1988
- 42Citations
- 3Captures
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Article Description
In an earlier paper, we introduced the concepts of phonon-assisted and impurity-assisted hopping processes to explain the c-axis resistivity in graphite intercalation compounds (GICs). A different theory was proposed by Shimamura. Both theories provide a qualitative explanation for the observed behaviors in low-stage compounds but they cannot account for the high-temperature behavior in high-stage compounds. In this paper two new mechanisms are introduced. One is the interaction of the carriers with the LO phonons polarized along the c axis. This is important in low-stage compounds with large charge transfer. The other mechanism is the scattering of the carriers by stacking faults, which is important in high-stage compounds. By considering the mechanisms proposed previously by us and by Shimamura together with the new mechanism, we obtain a qualitative explanation for the temperature and stage dependences of the c-axis resistivity in GICs. © 1988 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4243339079&origin=inward; http://dx.doi.org/10.1103/physrevb.37.4752; http://www.ncbi.nlm.nih.gov/pubmed/9945136; https://link.aps.org/doi/10.1103/PhysRevB.37.4752; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.4752/fulltext; http://link.aps.org/article/10.1103/PhysRevB.37.4752
American Physical Society (APS)
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