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C-axis conduction in graphite intercalation compounds

Physical Review B, ISSN: 0163-1829, Vol: 37, Issue: 9, Page: 4752-4759
1988
  • 42
    Citations
  • 0
    Usage
  • 3
    Captures
  • 0
    Mentions
  • 0
    Social Media
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Metrics Details

  • Citations
    42
    • Citation Indexes
      42
  • Captures
    3

Article Description

In an earlier paper, we introduced the concepts of phonon-assisted and impurity-assisted hopping processes to explain the c-axis resistivity in graphite intercalation compounds (GICs). A different theory was proposed by Shimamura. Both theories provide a qualitative explanation for the observed behaviors in low-stage compounds but they cannot account for the high-temperature behavior in high-stage compounds. In this paper two new mechanisms are introduced. One is the interaction of the carriers with the LO phonons polarized along the c axis. This is important in low-stage compounds with large charge transfer. The other mechanism is the scattering of the carriers by stacking faults, which is important in high-stage compounds. By considering the mechanisms proposed previously by us and by Shimamura together with the new mechanism, we obtain a qualitative explanation for the temperature and stage dependences of the c-axis resistivity in GICs. © 1988 The American Physical Society.

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