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Hole-capture cross section of DX centers in Ga1-xAlxAs

Physical Review B, ISSN: 0163-1829, Vol: 44, Issue: 15, Page: 7987-7992
1991
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We have measured the cross sections associated with electron and hole capture on the DX center in liquid-phase-epitaxially grown, Te-doped Ga1-xAlxAs for various alloy compositions x. The results obtained demonstrate that the DX center in direct-band-gap material (i.e., up to x=0.4) is not responsible for the minority-carrier lifetime, which has been measured independently. The barriers associated with electron and hole captures have been determined from the variations of the corresponding cross sections versus temperature in the x=0.4 material. These barriers are not compatible with a capture process via multiphonon emission, which suggests that this defect is not associated with a large electron-phonon interaction. © 1991 The American Physical Society.

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