Hole-capture cross section of DX centers in Ga1-xAlxAs
Physical Review B, ISSN: 0163-1829, Vol: 44, Issue: 15, Page: 7987-7992
1991
- 5Citations
- 2Captures
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Article Description
We have measured the cross sections associated with electron and hole capture on the DX center in liquid-phase-epitaxially grown, Te-doped Ga1-xAlxAs for various alloy compositions x. The results obtained demonstrate that the DX center in direct-band-gap material (i.e., up to x=0.4) is not responsible for the minority-carrier lifetime, which has been measured independently. The barriers associated with electron and hole captures have been determined from the variations of the corresponding cross sections versus temperature in the x=0.4 material. These barriers are not compatible with a capture process via multiphonon emission, which suggests that this defect is not associated with a large electron-phonon interaction. © 1991 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33747808586&origin=inward; http://dx.doi.org/10.1103/physrevb.44.7987; http://www.ncbi.nlm.nih.gov/pubmed/9998729; https://link.aps.org/doi/10.1103/PhysRevB.44.7987; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.7987/fulltext; http://link.aps.org/article/10.1103/PhysRevB.44.7987
American Physical Society (APS)
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