Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy
Physical Review B, ISSN: 0163-1829, Vol: 45, Issue: 7, Page: 3372-3375
1992
- 34Citations
- 190Usage
- 11Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations34
- Citation Indexes34
- CrossRef34
- 30
- Usage190
- Downloads184
- Abstract Views6
- Captures11
- Readers11
- 11
Article Description
Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3×1018 cm-3 ionized AsGa defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T500°C. © 1992 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0001556473&origin=inward; http://dx.doi.org/10.1103/physrevb.45.3372; http://www.ncbi.nlm.nih.gov/pubmed/10001911; https://link.aps.org/doi/10.1103/PhysRevB.45.3372; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.3372/fulltext; http://link.aps.org/article/10.1103/PhysRevB.45.3372; https://corescholar.libraries.wright.edu/physics/190; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1235&context=physics
American Physical Society (APS)
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