Field and Hall effects in semiconducting YBa2Cu3O6+
Physical Review B, ISSN: 0163-1829, Vol: 46, Issue: 1, Page: 520-523
1992
- 10Citations
- 3Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
The field-effect mobility, Hall coefficient, and conductivity as functions of the oxygen concentration and temperature are reported for YBa2Cu3O6 films on the insulating side of the insulator-to-metal transition. The temperature dependence of the conductivity and Hall coefficient indicate that for small the excess oxygen introduces acceptor states at about 30 meV above the valence-band edge. The field effect reveals a space-charge layer in which carriers are depleted at the air-YBa2Cu3O6 interface. The size of the field effect is limited by localized states at the interface. © 1992 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=24544448702&origin=inward; http://dx.doi.org/10.1103/physrevb.46.520; http://www.ncbi.nlm.nih.gov/pubmed/10002247; https://link.aps.org/doi/10.1103/PhysRevB.46.520; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.520/fulltext; http://link.aps.org/article/10.1103/PhysRevB.46.520
American Physical Society (APS)
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