Fano-like resonant interference in Raman spectra of electronic and LO-vibronic excitations in periodically δ-doped GaAs
Physical Review B, ISSN: 0163-1829, Vol: 47, Issue: 19, Page: 13011-13014
1993
- 24Citations
- 1Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
The asymmetry in the one-phonon Raman lines of a Si:GaAs δ-doped doping superlattice is interpreted as a quantum-mechanical interference process in which an incident photon is inelastically scattered by a resonance excitation composed of a bulk LO one-phonon state mixed to a continuum of electron intersubband transitions. The dependence of the line shape on the frequency as well as on the polarizations relative to the crystal axis of the incident and the inelastically scattered radiation is produced by the difference in Raman-scattering amplitudes associated with each component of the mixed excitation. © 1993 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0006148767&origin=inward; http://dx.doi.org/10.1103/physrevb.47.13011; http://www.ncbi.nlm.nih.gov/pubmed/10005514; https://link.aps.org/doi/10.1103/PhysRevB.47.13011; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.13011/fulltext; http://link.aps.org/article/10.1103/PhysRevB.47.13011
American Physical Society (APS)
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