Influence of piezoelectric fields on Rydberg energies in (Ga,In)As-GaAs single quantum wells embedded in p-i-n structures
Physical Review B, ISSN: 0163-1829, Vol: 48, Issue: 12, Page: 9122-9125
1993
- 7Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations7
- Citation Indexes7
- CrossRef7
Article Description
We have performed a variational calculation of the heavy-hole exciton for (Ga,In)As-GaAs strained-layer quantum wells embedded in p-i-n structures. The calculation has been made for sample growth along both the (001) and (111) directions. We show that the influence of the piezoelectric field may sometimes lead to strong orientation-dependent properties. In particular, when piezoelectric fields are present, the radiative lifetimes of heavy-hole excitons are strongly dependent on the thickness of the (Ga,In)As layer. © 1993 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0642280533&origin=inward; http://dx.doi.org/10.1103/physrevb.48.9122; http://www.ncbi.nlm.nih.gov/pubmed/10007136; https://link.aps.org/doi/10.1103/PhysRevB.48.9122; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.9122/fulltext; http://link.aps.org/article/10.1103/PhysRevB.48.9122
American Physical Society (APS)
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