PlumX Metrics
Embed PlumX Metrics

Magnetic correlations on the insulating side of the metal-insulator transition in amorphous Si1-xMnx

Physical Review B, ISSN: 0163-1829, Vol: 51, Issue: 23, Page: 16549-16552
1995
  • 26
    Citations
  • 0
    Usage
  • 7
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

Article Description

We have investigated the low-temperature conductivity and magnetoresistance of amorphous Si1-xMnx films on the insulating side of the metal-insulator transition after annealing at room temperature for eight years. As temperature is reduced, we find a crossover from an exp[-(T0/T)1/2] form for variable-range-hopping conduction in a Coulomb gap to a simply activated law, exp(-ΔE/kT). Application of a magnetic field results in a linear decrease of the activation energy ΔE. This behavior is attributed to the presence of a ''hard'' magnetic gap caused by the s-d exchange interaction between the hopping electrons and localized spins on clusters of Mn atoms with the formation of magnetic polarons. © 1995 The American Physical Society.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know