Magnetic correlations on the insulating side of the metal-insulator transition in amorphous Si1-xMnx
Physical Review B, ISSN: 0163-1829, Vol: 51, Issue: 23, Page: 16549-16552
1995
- 26Citations
- 7Captures
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Metrics Details
- Citations26
- Citation Indexes26
- 26
- CrossRef15
- Captures7
- Readers7
Article Description
We have investigated the low-temperature conductivity and magnetoresistance of amorphous Si1-xMnx films on the insulating side of the metal-insulator transition after annealing at room temperature for eight years. As temperature is reduced, we find a crossover from an exp[-(T0/T)1/2] form for variable-range-hopping conduction in a Coulomb gap to a simply activated law, exp(-ΔE/kT). Application of a magnetic field results in a linear decrease of the activation energy ΔE. This behavior is attributed to the presence of a ''hard'' magnetic gap caused by the s-d exchange interaction between the hopping electrons and localized spins on clusters of Mn atoms with the formation of magnetic polarons. © 1995 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0039759891&origin=inward; http://dx.doi.org/10.1103/physrevb.51.16549; http://www.ncbi.nlm.nih.gov/pubmed/9978656; https://link.aps.org/doi/10.1103/PhysRevB.51.16549; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.16549/fulltext; http://link.aps.org/article/10.1103/PhysRevB.51.16549
American Physical Society (APS)
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