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L-band recombination iP multiple quantum wells

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 53, Issue: 19, Page: 12633-12636
1996
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  • Citations
    6
    • Citation Indexes
      6

Article Description

We report the direct observation of recombination from the (Formula presented) band in (Formula presented)(Formula presented)P/(Formula presented)(Formula presented)P multiple quantum wells. The indirect (Formula presented) transition is observed in unstrained structures with narrow wells and in tensile strained structures, using high-pressure photoluminescence measurements. (Formula presented) recombination is characterized by a pressure coefficient of 60± 5 meV/GPa, considerably smaller than that of the direct gap (Formula presented) states. In the same experiments we also identify heterostructure states associated with (Formula presented) and (Formula presented) from which we determine the separation among the conduction minima in unstrained bulk (Formula presented)(Formula presented)P for x≤0.48. © 1996 The American Physical Society.

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