Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 54, Issue: 20, Page: 14589-14594
1996
- 5Citations
- 2Captures
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Article Description
We report on a study of the time-resolved luminescence of type-II GaAs/AlAs superlattices near the type-I to type-II crossover. In spite of the slight type-II band alignment, the luminescence is dominated by the type-I transition. This is due to the inhomogeneous broadening of the type-I transition and the weak type-II oscillator strength, leading to a dominant luminescence of deeply localized type-I states. The relaxation within these localized states is found to be in agreement with a hopping model. At higher temperatures and excitation densities, the AlAs X minima act as an electron reservoir, leading to a strong increase of the luminescence decay time. © 1996 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0342338637&origin=inward; http://dx.doi.org/10.1103/physrevb.54.14589; http://www.ncbi.nlm.nih.gov/pubmed/9985466; https://link.aps.org/doi/10.1103/PhysRevB.54.14589; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.14589/fulltext; http://link.aps.org/article/10.1103/PhysRevB.54.14589
American Physical Society (APS)
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