Transport mechanism of Γ- and X-band electrons iAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 54, Issue: 3, Page: 2059-2066
1996
- 11Citations
- 2Captures
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Metrics Details
- Citations11
- Citation Indexes11
- 11
- CrossRef8
- Captures2
- Readers2
Article Description
The effect of the Γ- and X-band electrons in the (Formula presented)(Formula presented)As/AlAs/GaAs double-barrier quantum well (DBQW) is investigated by a microscopic empirical pseudopotential calculation. The DBQW structure used in the calculation is designed as a 3-5-μm quantum-well infrared photodetector with an associated transition energy of 313 meV. DBQW tunneling transmission via Γ- and X-like states as a function of electron energy and applied voltage are described and compared to that in a single-barrier AlAs/GaAs quantum well. The dark current is simulated by the confined ground-state electron tunneling out of the well. We find that, at high-bias voltage, tunneling via X-like states increases the current by a few orders of magnitude. We have also varied the additional barrier thickness and found that for a very thin (<20 Å) additional barrier DBQW, the excited-state electrons are not blocked by the Γ-band barrier, and may give a high photocurrent without the assistance of the X band, although the dark current also increases. © 1996 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0001430245&origin=inward; http://dx.doi.org/10.1103/physrevb.54.2059; http://www.ncbi.nlm.nih.gov/pubmed/9986058; https://link.aps.org/doi/10.1103/PhysRevB.54.2059; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2059/fulltext; http://link.aps.org/article/10.1103/PhysRevB.54.2059
American Physical Society (APS)
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