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Local arrangement of silylene groups on Si(100)2×1 aftersdecomposition

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 55, Issue: 7, Page: 4659-4664
1997
  • 21
    Citations
  • 0
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  • 6
    Captures
  • 0
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Metrics Details

  • Citations
    21
    • Citation Indexes
      21
  • Captures
    6

Article Description

The interaction between Si(100)2×1 and (Formula presented) under UHV chemical vapor deposition conditions between 550 and 690 K is studied with high-resolution scanning tunneling microscopy and kinetic model calculations. In addition to small anisotropic Si islands and patches of hydrogen-terminated substrate, metastable cross-shaped structural tetramer units are formed in this temperature region. These tetramers are interpreted as a combination of four (Formula presented) groups connecting four Si substrate atoms, and their coverage is correlated with the decomposition kinetics of (Formula presented) . © 1997 The American Physical Society.

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