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Capacitance transient study of the deep Fe acceptor in indium phosphide

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 56, Issue: 16, Page: 10241-10248
1997
  • 15
    Citations
  • 0
    Usage
  • 8
    Captures
  • 0
    Mentions
  • 0
    Social Media
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Metrics Details

  • Citations
    15
    • Citation Indexes
      15
  • Captures
    8

Article Description

We present a detailed study of the electrical properties of the deep (Formula presented) acceptor in InP by deep-level transient spectroscopy. The Fe acceptor transition has been observed in electron and hole emission in (Formula presented)- and (Formula presented)-type InP. A study of the electron emission signature reveals an electric-field enhancement of the emission rate, which is best explained by a polarization potential model. At 300 K electron and hole capture cross sections of (Formula presented) and (Formula presented) were determined, respectively, indicating the Fe acceptor being a recombination center. The capture cross sections were found to be temperature dependent in agreement with a multiphonon emission process with activation energies of 138±13 meV for electron and 161±15 meV for hole capture. Measurements of the (Formula presented) electron capture cross section at electric-field strengths above (Formula presented) reveal an approximately 70 times higher value of (Formula presented) than without an electric field due to an electric-field-induced lowering of the capture barrier. This increase of the capture cross section is most likely due to a decreased capture barrier for electrons in the (Formula presented) valleys. Since the capture barrier is close to zero when an electric field is applied, the apparent activation energy of (Formula presented) eV, determined by deep-level transient spectroscopy from the carrier emission in an electric field, has not to be corrected by the zero-field capture barrier energy. © 1997 The American Physical Society.

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