Tunneling transport in crystalline Si of different doping
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 58, Issue: 24, Page: 16144-16153
1998
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Article Description
(Formula presented) has been implanted into crystalline Si at temperatures of (Formula presented) in order to study its transport properties. At low implantation energies a major fraction of (Formula presented) is mobile; the rest remains trapped up to 500 K. At (Formula presented) our data complies with the established Arrhenius behavior with an activation energy of (Formula presented) and a preexponential factor of (Formula presented) at (Formula presented) however, the transport follows a power law of (Formula presented) with (Formula presented) indicative of a tunneling mechanism. In this range, diffusion is found to be unaffected by the Fermi-level position. Tunneling parameters have been derived and transport paths selected. © 1998 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0000057032&origin=inward; http://dx.doi.org/10.1103/physrevb.58.16144; https://link.aps.org/doi/10.1103/PhysRevB.58.16144; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.16144/fulltext; http://link.aps.org/article/10.1103/PhysRevB.58.16144
American Physical Society (APS)
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