Direct measurement of field effects on surface diffusion
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 58, Issue: 20, Page: R13423-R13425
1998
- 36Citations
- 30Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
We present here a method for quantitatively determining tip effects on surface diffusion during a scanning tunneling microscopy experiment. Using the technique of atom tracking, we measure the bias voltage and tunnel current dependencies of adsorbed Si dimer dynamics on Si(001). Throughout the range of typical tunneling conditions, the activation barrier for diffusion varies by less than 3%. We also find a striking difference between the electric-field effects on dimer diffusion and rotation, indicating the importance of transition states for this system. © 1998 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0012486591&origin=inward; http://dx.doi.org/10.1103/physrevb.58.r13423; https://link.aps.org/doi/10.1103/PhysRevB.58.R13423; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R13423/fulltext; http://link.aps.org/article/10.1103/PhysRevB.58.R13423
American Physical Society (APS)
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