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Valence-band electronic structure of (formula presented) epitaxy on coo(100)

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 59, Issue: 7, Page: 4791-4798
1999
  • 158
    Citations
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  • 71
    Captures
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    158
    • Citation Indexes
      158
  • Captures
    71

Article Description

Valence-band photoemission studies have been performed on a (Formula presented) single crystal as it is slowly oxidized under (Formula presented) (Formula presented) at 623 K, eventually forming a (Formula presented) epitaxial film. The most significant changes occur in (Formula presented)-related features, with the peak located at the top of the valence band sharpening and shifting to lower binding energies as the spinel oxide forms. Constant initial-state measurements indicate that (Formula presented) contains admixture from neighboring O (Formula presented) in its (Formula presented) band, as observed for CoO and other monoxide charge-transfer insulators. Unlike the rocksalt monoxides, which have only a single type of cobalt (Formula presented) located in octahedral lattice sites, the spinel (Formula presented) has both octahedral (Formula presented) and tetrahedral (Formula presented) sublattices. The peak at the top of the (Formula presented) valence band results from the (Formula presented) final state of the octahedral (Formula presented) (Formula presented) band. Although some states derived from tetrahedral (Formula presented) may be present at the top of the valence band, the greatest contribution from the tetrahedral (Formula presented) sublattice appears at approximately -3.8 eV, overlapping with O (Formula presented) derived features of the spectrum. The (Formula presented) (Formula presented) satellite is much less intense in (Formula presented) than in CoO, as is observed for the analogous structure in the cobalt (Formula presented) core spectra. An oxygen (Formula presented)-derived structure remains fairly constant throughout the oxidation process, with the exception of an intermediate species, which imparts a broad, humplike appearance centered at -5.3 eV to the O (Formula presented) region and disappears as oxidation to (Formula presented) is completed. The origin of the feature is not clear; however it is most likely due either to an adsorbate or to a defectlike intermediate in the oxidation process. © 1999 The American Physical Society.

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