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Model for optical absorption in porous silicon

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 60, Issue: 11, Page: 8246-8252
1999
  • 29
    Citations
  • 0
    Usage
  • 24
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    29
    • Citation Indexes
      29
  • Captures
    24

Article Description

In this paper we analyze the optical absorption in porous silicon. This is the first attempt to explicitly demonstrate that it is not possible to extract the band gap of low-dimensional nanostructures like porous silicon from a Tauc plot of √αħω vs ħω. So we model the absorption process assuming that porous silicon is a pseudo-one-dimensional material system having a distribution of band gaps. We show that in order to explain the absorption we specifically need to invoke the following: (a) k is not conserved in optical transitions, (b) the oscillator strength of these transitions depends on the size of the nanostructure in which absorption takes place, and (c) the distribution of band gaps significantly influences the optical absorption. A natural explanation of the temperature dependence of absorption in porous silicon also follows from our model. © 1999 The American Physical Society.

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