Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 61, Issue: 11, Page: 7195-7198
2000
- 16Citations
- 14Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
The diffusion of deuterium (Formula presented) in epitaxial (Formula presented) layers with buried highly Al-acceptor doped regions has been studied by secondary ion mass spectrometry. (Formula presented) was introduced in the near surface region by the use of 20-keV implantation after which the samples were thermally annealed. As a result, an anomalous accumulation of (Formula presented) in the high doped layers was observed. To explain the accumulation kinetics, a model is proposed where positively charged (Formula presented) ions are driven into the high doped layer and become trapped there by the strong electric field at the edges. This effect is important for other semiconductors as well, since hydrogen is a common impurity present at high concentrations in many semiconductors. © 2000 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0001726503&origin=inward; http://dx.doi.org/10.1103/physrevb.61.7195; https://link.aps.org/doi/10.1103/PhysRevB.61.7195; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.7195/fulltext; http://link.aps.org/article/10.1103/PhysRevB.61.7195
American Physical Society (APS)
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