Local structure around Fe in the diluted magnetic semiconductors GaFeAs studied by x-ray absorption fine structure
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 63, Issue: 19
2001
- 22Citations
- 9Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Extended x-ray absorption fine structure and near-edge x-ray absorption fine structure techniques are employed to investigate the local structure and valency about Fe atoms in the diluted magnetic alloy semiconductor system GaFeAs prepared by molecular-beam epitaxy under various conditions. This experiment is aimed at elucidating possible correlations between the microstructures in these diluted magnetic semiconductors and some physical properties. Our x-ray results offer direct evidence of Fe substitution for Ga sites in GaAs prepared at relatively low substrate temperatures, wherein the GaFeAs compound is mainly paramagnetic. However, the Fe impurity atoms could form small Fe clusters and/or Fe-As complexes when the samples are grown at high temperatures. © 2001 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0034907661&origin=inward; http://dx.doi.org/10.1103/physrevb.63.195209; https://link.aps.org/doi/10.1103/PhysRevB.63.195209; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.195209/fulltext; http://link.aps.org/article/10.1103/PhysRevB.63.195209
American Physical Society (APS)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know