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Local structure around Fe in the diluted magnetic semiconductors GaFeAs studied by x-ray absorption fine structure

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 63, Issue: 19
2001
  • 22
    Citations
  • 0
    Usage
  • 9
    Captures
  • 0
    Mentions
  • 0
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Metrics Details

  • Citations
    22
    • Citation Indexes
      22
  • Captures
    9

Article Description

Extended x-ray absorption fine structure and near-edge x-ray absorption fine structure techniques are employed to investigate the local structure and valency about Fe atoms in the diluted magnetic alloy semiconductor system GaFeAs prepared by molecular-beam epitaxy under various conditions. This experiment is aimed at elucidating possible correlations between the microstructures in these diluted magnetic semiconductors and some physical properties. Our x-ray results offer direct evidence of Fe substitution for Ga sites in GaAs prepared at relatively low substrate temperatures, wherein the GaFeAs compound is mainly paramagnetic. However, the Fe impurity atoms could form small Fe clusters and/or Fe-As complexes when the samples are grown at high temperatures. © 2001 The American Physical Society.

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