Evidence for strain compensation in stabilizing epitaxial growth of highly doped germanium
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 69, Issue: 8
2004
- 26Citations
- 7Captures
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Article Description
We report on a study of the epitaxial phase diagram of Co- and Mn-doped Ge(001) magnetic semiconductors. Complementary doping using dopants from different groups of elements can compensate for the effects of lattice strain caused by the doping species. Reducing lattice mismatch with the Ge host has been shown to be the key to stabilizing epitaxial growth and suppressing phase separation at higher doping levels. Applying this approach to other multidopant systems opens new prospects for tailoring highly doped electronic materials. © 2004 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=1842584656&origin=inward; http://dx.doi.org/10.1103/physrevb.69.081304; https://link.aps.org/doi/10.1103/PhysRevB.69.081304; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.081304/fulltext; http://link.aps.org/article/10.1103/PhysRevB.69.081304
American Physical Society (APS)
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