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In situ investigation of band bending during formation of GaAs-Ge heterostructures

Physical Review Letters, ISSN: 0031-9007, Vol: 52, Issue: 2, Page: 141-144
1984
  • 50
    Citations
  • 0
    Usage
  • 3
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    50
    • Citation Indexes
      50
  • Captures
    3

Article Description

Symmetry-forbidden phonon Raman scattering is used to investigate in situ the formation of GaAs-Ge heterojunctions. Under epitaxial growth conditions the band bending in GaAs induced by the first monolayers of Ge decreases strongly for thicker overlayers. For amorphous overlayers the Fermi level remains pinned around midgap. A simple model is presented which explains the observed behavior. The development of the Ge phonons demonstrates crystalline growth for substrate temperatures Tg>~300 K and amorphous growth for Tg=100 K. © 1984 The American Physical Society.

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