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Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)

Physical Review Letters, ISSN: 0031-9007, Vol: 60, Issue: 5, Page: 440-443
1988
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Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier. © 1988 The American Physical Society.

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