Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110)
Physical Review Letters, ISSN: 0031-9007, Vol: 60, Issue: 5, Page: 440-443
1988
- 151Citations
- 2Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations151
- Citation Indexes151
- CrossRef151
- 143
- Captures2
- Readers2
Article Description
Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 AI) in the formation of the Schottky barrier. © 1988 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4143136984&origin=inward; http://dx.doi.org/10.1103/physrevlett.60.440; http://www.ncbi.nlm.nih.gov/pubmed/10038547; https://link.aps.org/doi/10.1103/PhysRevLett.60.440; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.440/fulltext; http://link.aps.org/article/10.1103/PhysRevLett.60.440
American Physical Society (APS)
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