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1/f resistance noise complements anelasticity measurements of hydrogen motion in amorphous Pd80Si20

Physical Review Letters, ISSN: 0031-9007, Vol: 65, Issue: 8, Page: 1040-1043
1990
  • 16
    Citations
  • 0
    Usage
  • 2
    Captures
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    16
    • Citation Indexes
      16
  • Captures
    2

Article Description

The time-dependent resistance fluctuations due to motion of H in amorphous PdSi metal films exhibit 1/f noise with two thermally activated peaks, one at 80 K and one shifting with H concentration between 160 and 130 K. The higher peak closely matches an internal-friction peak, showing that the same H hops can relax elastic strain and modulate resistance, while the lower peak reflects hops that do not relax strain. Thus resistance fluctuations and mechanical dissipation provide complementary probes of defect motion. © 1990 The American Physical Society.

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