Silicon-interstitial oxygen-interstitial complex as a model of the 450°C oxygen thermal donor in silicon
Physical Review Letters, ISSN: 0031-9007, Vol: 66, Issue: 6, Page: 747-749
1991
- 25Citations
- 2Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
The complex of a divalent silicon interstitial and a pair of adjacent oxygen intersitials is proposed as the core of the 450°C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to a self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge. The calculated spin distribution is in qualitative agreement with the one found experimentally for the NL8 center. © 1991 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0642383635&origin=inward; http://dx.doi.org/10.1103/physrevlett.66.747; http://www.ncbi.nlm.nih.gov/pubmed/10043890; https://link.aps.org/doi/10.1103/PhysRevLett.66.747; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.66.747/fulltext; http://link.aps.org/article/10.1103/PhysRevLett.66.747
American Physical Society (APS)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know