Dynamics of rough Ge(001) surfaces at low temperatures
Physical Review Letters, ISSN: 1079-7114, Vol: 76, Issue: 21, Page: 3995-3998
1996
- 27Citations
- 11Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Mass transport by surface diffusion on rough Ge(001) surfaces is characterized using in situ scanning tunneling microscopy. Rough starting surfaces with nearly constant step densities are prepared by low-energy ion etching at 270 °C; the characteristic in-plane length scale of the roughness is varied from 37 to 118 nm. These surfaces are subsequently annealed at 245–325 °C for times between 10 min and 6 h and imaged at room temperature. The activation energy for surface smoothing is 1.9 ± 0.25 eV. The dependence of the relaxation rate on the in-plane length scale is inconsistent with the continuum model of Mullins: the time constant τ of the smoothing process increases with increasing lateral length scale L as τ ∝ L, n = 2.2 ± 0.4. © 1996 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4243604305&origin=inward; http://dx.doi.org/10.1103/physrevlett.76.3995; http://www.ncbi.nlm.nih.gov/pubmed/10061165; https://link.aps.org/doi/10.1103/PhysRevLett.76.3995; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.76.3995/fulltext; http://link.aps.org/article/10.1103/PhysRevLett.76.3995
American Physical Society (APS)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know