Carrier-Controlled Doping Efficiency in LaCuOδ
Physical Review Letters, ISSN: 1079-7114, Vol: 77, Issue: 27, Page: 5413-5416
1996
- 67Citations
- 8Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
We have studied the excess oxygen content and hole concentration in 110 °C annealed LaCuO prepared by electrochemical oxidation for 0<δ<0.12. Two distinct sites were observed with doping efficiency of 2 or 1.3 holes per excess oxygen atom. The occupation of the two different sites is determined by a critical carrier concentration P∼0.06. As a consequence, a sudden increase of chemical potential of doped holes at P is suggested. © 1996 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0030379912&origin=inward; http://dx.doi.org/10.1103/physrevlett.77.5413; http://www.ncbi.nlm.nih.gov/pubmed/10062797; https://link.aps.org/doi/10.1103/PhysRevLett.77.5413; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.5413/fulltext; http://link.aps.org/article/10.1103/PhysRevLett.77.5413
American Physical Society (APS)
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