Silicon-On-Nothing ScAlN pMUTs
IEEE International Ultrasonics Symposium, IUS, ISSN: 1948-5727, Page: 1-4
2021
- 18Citations
- 17Captures
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Conference Paper Description
This work presents a promising microfabrication technique employing the silicon-on-nothing (SON) process to form a 2{m} thick continuous monocrystalline silicon membrane over a vacuum cavity of 1{m} in depth. Utilizing the SON process, high fill-factor piezoelectric micromachined ultrasonic transducer (pMUT) arrays on an 8-inch silicon wafer with cavity widths ranging from 170{m} down to 38{m} have been demonstrated. Devices are designed with 15% scandium-doped aluminum nitride as the piezoelectric layer of the pMUT for both air-coupled and water-coupled applications. The air-coupled pMUTs show a peak displacement frequency from 0.8 to 1.6 MHz with a Q-factor between 120 to 194. The water-coupled pMUT arrays show a transmit pressure measured by a needle hydrophone, in DI water at a distance of 20 mm, ranging between 0.4 to 6.9 kPa/V with peak frequency between 5 to 13.4 MHz and fractional bandwidth 56 to 36%, respectively. The piezoelectric-over-SON process proposed here has the potential to gain traction in low-cost and high-yield pMUT manufacturing.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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