Er-coupled Si nanocluster waveguide
IEEE Journal on Selected Topics in Quantum Electronics, ISSN: 1077-260X, Vol: 12, Issue: 6, Page: 1607-1617
2006
- 51Citations
- 24Captures
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Article Description
Rib-loaded waveguides containing Er -coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence of Si-nc strongly improves the efficiency of Er excitation but may introduce optical loss mechanisms, such as Mie scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-nc-related losses have been minimized to 1 dB/cm by lowering the annealing time of the Er-doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er absorption cross section is found comparable to that of Er in SiO 2. However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role of confined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement of about 1.34 at 1535 nm was measured. © 2006 IEEE.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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