Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Page: 1-4
2022
- 2Citations
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Conference Paper Description
This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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