Improved continuous model for short channel double-gate junctionless transistors
2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Page: 1-4
2014
- 2Citations
- 4Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Conference Paper Description
This work aims to present an evolution of a continuous model for short channel double-gate junctionless transistors, where the saturation velocity is included and model validation is spread to different doping concentrations, channel widths and shorter channel lengths. A long channel charge-based model for double-gate devices is used as a basis for the development of this model. To consider the short channel effects, the proposed model accounts for the influence of the drain bias in the channel potential, the reduction of the effective channel length in saturation regime and the saturation velocity effect for short channel transistors. Three dimensional numerical simulations will be used to validate the model.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know