Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs
SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices, Page: 1-4
2021
- 2Citations
- 1Captures
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Conference Paper Description
In this work, the study of the effective electron mobility (peff) of n-channel MOS transistor nanowires is presented. By extracting the mobility of the top and sidewall using the surface current separation technique together with the split-CV method. Analyzing the comparison of simulated TCAD results and experimental transistors fabricated with various fin widths (12nm-82nm) and how the effect of varying the fin width and applied substrate voltages interfere with carrier mobility values.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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