Recent progress in understanding the instability and defects in gate dielectrics
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, Page: 608-611
2008
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Conference Paper Description
This work gives a review of the recent progress in understanding the instability and defects in gate dielectrics. It consists of two parts: electron-trapping for nMOSFETs and positive charging for pMOSFETs. On electron traps, the issues addressed include the relation between conduction mechanism and trap-filling, the capture cross section, location and sensitivity to fabrication techniques. On positive charging, a framework is proposed for the defect and the unique impact of each type of defect on device performance will be shown. Finally, the progress in NBTI measurement will be highlighted. © 2008 IEEE.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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