High-performance 40nm gate length InSb P-channel compressively strained quantum well field effect transistors for low-power (V=0.5V) logic applications
Technical Digest - International Electron Devices Meeting, IEDM, ISSN: 0163-1918, Page: 1-4
2008
- 65Citations
- 89Captures
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Conference Paper Description
This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm/V-s. The shortest 40nm gate length (L ) transistors achieve peak transconductance (G) of 510μS/um and cut-off frequency (f) of 140GHz at supply voltage of 0.5 V. These represent the highest G and f ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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