Enhanced Pockels effect in strained silicon by means of a SiGe/Si/SiGe slot structure
2020 IEEE Photonics Conference, IPC 2020 - Proceedings, Page: 1-2
2020
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Conference Paper Description
A slot waveguide structure made of a SiGe/Si/SiGe heterojunction is proposed to enhance Pockels effect in strained silicon. The strain is applied via lattice mismatch between layers, while the slot configuration optimizes the overlap between the optical and electric field inside the strained silicon.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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