Analysis of Chloride Ion Sensor Modified by Graphene Oxide under Microfluid Flow
IEEE Sensors Journal, ISSN: 1530-437X, Vol: 19, Issue: 9, Page: 3217-3223
2019
- 7Citations
- 18Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
In this paper, we used a thermal evaporation system and a radio-frequency sputtering system to fabricate aluminum (Al) electrodes and indium-gallium-zinc oxide (IGZO) sensing membranes on the polyethylene terephthalate substrate. The IGZO/Al chloride ion sensor modified by graphene oxide has array sensing windows to avoid sensor malfunction. We used a screen printing technology to fabricate the sensor that made sensor a flexible structure. It can be adapted to many environments. The chloride ion sensor was immersed in the different concentrations of NaCl solutions from 10 to 1 M to measure the sensing characteristics of the chloride ion sensor. From the static measurement, the average sensitivity and linearity of the chlorine ion sensor were 60.536 mV/pCl and 0.973, respectively. We integrated microfluidic framework to measure the dynamic characteristic. From the dynamic measurement, we could know that the best average sensitivity and linearity of the chloride ion sensor for the flow rate of 20μL/min were 64.639 mV/pCl and 0.972, respectively. To confirm the non-ideal effect of chloride ion, the hysteresis voltages of chloride ion in the different concentrations of NaCl solutions in two different cycles were 2.700 and 2.789 mV, respectively.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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