Numerical analysis on Zn Cd S/CdTe solar cells with different buffer layers, front and back contacts
2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts, Page: 60-64
2011
- 2Citations
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Conference Paper Description
In this work, a numerical analysis on cadmium stannate (Cd SnO ) as front contact, zinc stannate (Zn SnO ) as buffer layer and antimony telluride (Sb Te ) with molybdenum (Mo) as back contact has been conducted in the conventional (SnO /CdS/CdTe/Ag) CdTe cell structures. Here, CdS window layer is replaced by zinc cadmium sulphide (Zn Cd S) aiming to improve efficiency and stability utilizing Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator. Efficiency as high as 17.0% has been found with 80 nm of Zn Cd S window layer for x0.1, 1 m of CdTe layer and 100 nm Zn SnO buffer layer without Sb2Te back contact. However, ZnO insertion shows lower conversion efficiencies of 11.84% and 14.26%, respectively with and without Sb Te back contact. It has been found that 1 m of CdTe absorber layer, 70 nm of Zn Cd S (x0.1) window layer, 100 nm of Zn SnO buffer layer and 100 nm Sb Te back contact layer are sufficient for high efficiency (18.5%) Zn Cd S/CdTe cells. Moreover, it has been found that the cell normalized efficiency linearly decreases with the increasing operating temperature at the temperature gradient of 0.3%/C proving its stability as others. © 2011 IEEE.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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