CH/H reactive ion etching induced damage of InP
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 18, Issue: 6, Page: 2803-2807
2000
- 8Citations
- 5Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
The damage induced by reactive ion etching (RIE) on InP samples was studied using electrochemical capacitance-voltage measurements and transient reflected microwave conductivity (TRMC). Current-voltage measurements proved that the surface carrier concentration was changed which also influenced the contact barrier. TRMC showed that the charge carrier mobilities were also modified and there was a loss of electron mobility after RIE and annealing.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0034352151&origin=inward; http://dx.doi.org/10.1116/1.1326944; https://pubs.aip.org/jvb/article/18/6/2803/468277/CH4-H2-reactive-ion-etching-induced-damage-of-InP; http://scitation.aip.org/content/avs/journal/jvstb/18/6/10.1116/1.1326944; https://www.scitation.org/action/captchaChallenge?redirectUrl=https%3A%2F%2Fwww.scitation.org%2Fdoi%2Ffull%2F10.1116%2F1.1326944
American Vacuum Society
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