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CH/H reactive ion etching induced damage of InP

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 18, Issue: 6, Page: 2803-2807
2000
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Article Description

The damage induced by reactive ion etching (RIE) on InP samples was studied using electrochemical capacitance-voltage measurements and transient reflected microwave conductivity (TRMC). Current-voltage measurements proved that the surface carrier concentration was changed which also influenced the contact barrier. TRMC showed that the charge carrier mobilities were also modified and there was a loss of electron mobility after RIE and annealing.

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