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Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 19, Issue: 2, Page: 551-556
2001
  • 50
    Citations
  • 0
    Usage
  • 23
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    50
    • Citation Indexes
      50
  • Captures
    23

Article Description

The effect of surface modification on Q factors of ultrathin single-crystal silicon cantilevers with different thicknesses and different orientations was studied. Exposure to atomic hydrogen led to a larger relative increase of the Q factor in thinner structures than in thicker ones.

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