Contact resistance of focused ion beam deposited platinum and tungsten films to silicon
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 19, Issue: 6, Page: 2543-2546
2001
- 34Citations
- 38Captures
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Article Description
The suitability of focused ion beam (FIB) deposited metals, specifically platinum and tungsten, for use in making a direct contact to bare silicon was experimentally studied. The average contact resistance of FIB-deposited platinum contacts to silicon was on the order of 10ωcm, while FIB-deposited tungsten contacts were on the order of 10ωcm, though individual contacts varied widely in their resistance. This difference was attributed to silicide formation at the metal-silicon junction for the platinum contacts.
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