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Ordering and surface state reduction of GaAs (100) by low energy S bombardment

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, ISSN: 0734-2101, Vol: 20, Issue: 1, Page: 165-169
2002
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Ion bombardment induced surface defects on semiconductors. For sulfur on III-V compounds, however, the tendency to form bridging sulfur on the top surface provided a self-repairing mechanism to reduce surface defects. The 50 eV sulfur ion bombardment effectively formed a GaAs-layer with the help of the kinetic energy in the sulfur ions. Further annealing desorbed the excesses As and S and formed the S-Ga briding bonds on the top surface. At the same time, the formation of S-Ga briding bonds assissted the top surface in forming a crystalline structure similar to the bulk GaAs.

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