Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 20, Issue: 5, Page: 2091-2095
2002
- 10Citations
- 8Captures
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Article Description
The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036026402&origin=inward; http://dx.doi.org/10.1116/1.1508818; https://pubs.aip.org/jvb/article/20/5/2091/467862/Effect-of-In-and-N-incorporation-on-the-properties; http://scitation.aip.org/content/avs/journal/jvstb/20/5/10.1116/1.1508818; http://scitation.aip.org/limit_exceeded.html
American Vacuum Society
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