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Stripping of photoresist using a remote thermal Ar/O and Ar/N/O plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 21, Issue: 1 SPEC., Page: 61-66
2003
  • 29
    Citations
  • 0
    Usage
  • 16
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    29
    • Citation Indexes
      29
  • Captures
    16

Article Description

Using the expanding thermal arc plasma, photoresist was successfully etched in Ar/O and Ar/ON mixtures. The etch rate increased with background pressure. Adding a small amount of nitrogen to argon as the carrier gas resulted in higher etch rates.

Bibliographic Details

G. J. H. Brussaard; K. G. Y. Letourneur; M. Schaepkens; M. C. M. van de Sanden; D. C. Schram

American Vacuum Society

Physics and Astronomy; Engineering

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