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Reliability retention in in situ pyrolytic-gas passivated ultrathin silicon oxide gate films oxidized at 700 °C

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 21, Issue: 4, Page: 1329-1334
2003
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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