Ion-bombardment induced light emission from Si(100) surfaces under continuous silane exposures
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ISSN: 0734-2101, Vol: 22, Issue: 5, Page: 2083-2090
2004
- 2Citations
- 3Captures
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Article Description
The intensities of the optical spectral lines emitted from a Si (100) surface under Ar ion bombardment as a function of the ion kinetic energy and the partial pressure of silane were discussed. It was observed that the ion flux was held constant while either the bombardment energy or the partial pressure of silane was varied. It was found that during continous silane exposure, the intensity of the optical lines also increased with increasing ion kinetic energy. Analysis shows that the intensity of the Balmer alpha transition decreases with increasing incident ion kinetic energy at all measured partial pressures of silane.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=8344283526&origin=inward; http://dx.doi.org/10.1116/1.1786310; https://pubs.aip.org/jva/article/22/5/2083/939653/Ion-bombardment-induced-light-emission-from-Si-100; http://scitation.aip.org/content/avs/journal/jvsta/22/5/10.1116/1.1786310; http://scitation.aip.org/limit_exceeded.html
American Vacuum Society
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