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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 23, Issue: 5, Page: 1943-1947
2005
  • 10
    Citations
  • 0
    Usage
  • 6
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    10
    • Citation Indexes
      10
  • Captures
    6

Article Description

A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes. © 2005 American Vacuum Society.

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