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Process dependence of the thermal conductivity of image reversal photoresist layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 25, Issue: 1, Page: 224-228
2007
  • 5
    Citations
  • 0
    Usage
  • 10
    Captures
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    Mentions
  • 0
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    5
    • Citation Indexes
      5
  • Captures
    10

Article Description

Thermal transport in polymer layers is an important consideration in various lithography techniques, including immersion lithography and thermolithography. The in-plane thermal conductivity of commercially available photoresist AZ 5214E is determined at each stage of lithography processes using ultrathin (<100 nm) freestanding membrane devices. The authors find that UV exposure does not lead to any appreciable change in thermal conductivity whereas cross-linking induced by postexposure bake results in a slight increase (∼5%). The thermal boundary resistance across interfaces between the resist layers and metal films/substrates is also found to be significant. The experimental techniques and data presented here will facilitate a systematic evaluation of thermal phenomena during lithography processes. © 2007 American Vacuum Society.

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