Electrical characterization of Co gamma radiation-exposed InAlN/GaN high electron mobility transistors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 31, Issue: 5
2013
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Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
III. RESULTS AND DISCUSSION A. Raman spectroscopy Raman spectral analysis was performed to investigate the effect of gamma-ray irradiation on the crystal quality and the
Article Description
InAlN/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I -V) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at V = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 10 cm Mrad in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In AlN/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions. © 2013 American Vacuum Society.
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