Nanostructured integrated electron source
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 16, Issue: 2, Page: 862-865
1998
- 30Citations
- 15Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Additive nanolithography with electron-beam induced deposition is applied to generate a nanostructured integrated field emission electron source. The source is built into a lithographically fabricated pattern of connecting lines on a chip. Current stabilizing resistors are integrated in to the connecting lines with the deposition technique. Field emission microscope investigation of deposited supertips proves that a confined emission is delivered from conducting tips into a beam divergence angle of ± 7°. The reduced brightness of the deposited supertips is evaluated. A tenfold higher reduced brightness is observed if compared to conventional Schottky field emitters. © 1998 American Vacuum Society.
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