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Nanostructured integrated electron source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, ISSN: 1071-1023, Vol: 16, Issue: 2, Page: 862-865
1998
  • 30
    Citations
  • 0
    Usage
  • 15
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    30
    • Citation Indexes
      30
  • Captures
    15

Article Description

Additive nanolithography with electron-beam induced deposition is applied to generate a nanostructured integrated field emission electron source. The source is built into a lithographically fabricated pattern of connecting lines on a chip. Current stabilizing resistors are integrated in to the connecting lines with the deposition technique. Field emission microscope investigation of deposited supertips proves that a confined emission is delivered from conducting tips into a beam divergence angle of ± 7°. The reduced brightness of the deposited supertips is evaluated. A tenfold higher reduced brightness is observed if compared to conventional Schottky field emitters. © 1998 American Vacuum Society.

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