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A novel suspended gate MOSFET pressure sensor

Proceedings of SPIE - The International Society for Optical Engineering, ISSN: 0277-786X, Vol: 5836, Page: 363-370
2005
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Conference Paper Description

A novel pressure sensor based on a Suspended Gate MOSFET is presented. The SG-MOSFET structure, fabricated in a SOI wafer, is modified by etching the bulk of the wafer back side in order to create a thin clamped membrane and to be able to measure pressure displacements. The whole structure forms a diaphragm, in which the bottom plate is a pressure sensitive terminal and the top plate forms the MOSFET gate terminal where the air-gap is proportional to the pressure application as gate insulator. The change of this air-gap distance modifies the drain current of the sensing MOSFET. The gate is suspended by arms allowing to modify the sensitivity of this sensor by a drive voltage. Two operation modes are proposed, one uses the drain current variations as output signal and the second one take advantage of the snap down effect. A model along with Finite Element Method simulations were made to provide a design model for the pressure sensor. Some pressure sensors were been fabricated with different dimensions.

Bibliographic Details

Jose A. Segovia; Montserrat Fernandez-Bolanos; Jose M. Quero; Carles Cane; Jung-Chih Chiao; Fernando Vidal Verdu

SPIE-Intl Soc Optical Eng

Materials Science; Physics and Astronomy; Computer Science; Mathematics; Engineering

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