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Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells

Semiconductors, ISSN: 1063-7826, Vol: 31, Issue: 4, Page: 391-398
1997
  • 13
    Citations
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  • 1
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Metrics Details

  • Citations
    13
    • Citation Indexes
      13
  • Captures
    1

Article Description

The anomalous alternating-sign magnetoresistance in a two-dimensional electron gas on an InGaAS/InP heterostructure was investigated experimentally at liquid-helium temperatures in a wide range of electron densities, including the case of two filled quantum-well subbands. The data obtained are analyzed in terms of a theory that takes into account terms in the spin splitting of the electron spectrum which are cubic and linear in the wave vector. The linear term is related to the asymmetry of the quantum well, i.e., the presence of an electric field at the heterojunction. It is shown that the new theoretical model describes the experiment better. © 1997 American Institute of Physics.

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